Problem NO: 11

It is desired to etch out a region of a silicon dioxide film on the surface of a silicon wafer. The SiO2\nfilm is 100 nm thick. The width of the etched

It is desired to etch out a region of a silicon dioxide film on the surface of a silicon wafer. The SiO2

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film is 100 nm thick. The width of the etched-out area is specified to be 650 nm. (a) If the degree of

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anisotropy for the etchant in the process is known to be 1.25, what should be the size of the opening

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in the mask through which the etchant will operate? (b) If plasma etching is used instead of wet

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etching, and the degree of anisotropy for plasma etching is infinity, what should be the size of the

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mask opening?

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