A single crystal boule of silicon is grown by the Czochralski process to an average diameter of 320\nmm with length = 1500 mm. The seed and tang ends a
A single crystal boule of silicon is grown by the Czochralski process to an average diameter of 320
\r\nmm with length = 1500 mm. The seed and tang ends are removed, which reduces the length to 1150
\r\nmm. The diameter is ground to 300 mm. A 90-mm-wide flat is ground on the surface which extends
\r\nfrom one end to the other. The ingot is then sliced into wafers of thickness = 0.50 mm, using an
\r\nabrasive saw blade whose thickness = 0.33 mm. Assuming that the seed and tang portions cut off
\r\nthe ends of the starting boule were conical in shape, determine (a) the original volume of the boule,
\r\nmm3; (b) how many wafers are cut from it, assuming the entire 1150 mm length can be sliced; and
\r\n(c) the volumetric proportion of silicon in the starting boule that is wasted during processing.